- Gate And Source And Drain
- Electronics: GASAD
Универсальный русско-английский словарь. Академик.ру. 2011.
Gate And Source And Drain
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Drain — Feldeffekttransistoren oder FET (engl. field effect transistor) sind eine Gruppe von unipolaren Transistoren, bei denen im Gegensatz zu den Bipolartransistoren nur ein Ladungstyp am Stromtransport beteiligt ist – abhängig von der Bauart… … Deutsch Wikipedia
Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… … Wikipedia
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia
Common source — Figure 1: Basic N channel JFET common source circuit (neglecting biasing details). Figure 2: Basic N channel JFET common source circuit with source degeneration … Wikipedia
Self-aligned gate — A self aligned gate is a design arrangement where a highly doped gate in a MOSFET is used as a mask for the doping of the source and drain around it. This technique ensures that the gate will always overlap the edges of the source and drain. The… … Wikipedia
Dual-Gate-MOSFET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Depletion and enhancement modes — In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage. Enhancement mode MOSFETs are the common … Wikipedia
High-k+Metal-Gate-Technik — Schematischer Querschnitt durch den Gate Aufbau eines Transistors in High k+Metal Gate Technik Die High k+Metal Gate Technik (HKMG Technik) bezeichnet in der Halbleitertechnik einen speziellen Aufbau von Metall Isolator Halbleiter… … Deutsch Wikipedia
Common gate — Figure 1: Basic N channel common gate circuit (neglecting biasing details); current source ID represents an active load; signal is applied at node Vin and output is taken from node Vout; output can be current or voltage In electronics, a common… … Wikipedia
Floating-Gate-Transistor — Ein Floating Gate Transistor ist ein spezieller Transistor, der in nichtflüchtigen Speichern zur permanenten Informationspeicherung eingesetzt wird. Er wurde 1967 von Dawon Kahng und S.M. Sze in den Bell Laboratories entwickelt [1] und stellt in… … Deutsch Wikipedia
Common drain — In electronics, a common drain amplifier, also known as a source follower, is one of three basic single stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the… … Wikipedia
